Eur. Phys. J. Appl. Phys.
Volume 85, Number 1, January 2019
|Number of page(s)||9|
|Section||Semiconductors and Devices|
|Published online||22 February 2019|
Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts
UDL, INSA Lyon, Universite Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS,
* e-mail: firstname.lastname@example.org
Received in final form: 14 December 2018
Accepted: 20 December 2018
Published online: 22 February 2019
Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Schottky Mo/4H-SiC diodes have been measured and analyzed as a function of temperature between 80 and 400 K. The I–V characteristics significantly deviate from ideal characteristics predicted by the thermionic emission model because of the inhomogeneity of Schottky contact. After a brief review of the different existing models, the main parameters (ideality factor, barrier height, and effective Richardson constant) of both diodes have been extracted in the frame of a Gaussian barrier height distribution model, whose mean and standard deviation are linearly dependent on voltage and temperature, as well as in the context of the potential fluctuation model. The results are compared with the values extracted by C–V and the values in the literature. A link is established between these two models. Diodes of different I–V characteristics, either identified as single barrier or double barrier, have been analyzed by Deep Level Transient Spectroscopy (DLTS) to investigate the deep level defects present. No noticeable difference has been found.
© EDP Sciences, 2019
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