Eur. Phys. J. Appl. Phys.
Volume 45, Number 1, January 2009
|Number of page(s)||7|
|Section||Semiconductors and Devices|
|Published online||14 January 2009|
Temperature-dependent Schottky barrier inhomogeneity of Ni/n-GaAs diodes
Department of Physics, Faculty of Sciences, Atatürk University,
25240 Erzurum, Turkey
Corresponding author: firstname.lastname@example.org
Revised: 24 September 2008
Accepted: 9 October 2008
Published online: 14 January 2009
We have reported a study of the I–V characteristics of Ni/n-GaAs Schottky barrier diodes (SBDs) in a wide temperature range of 60–320 K by a step of 20 K, which are prepared by magnetron DC sputtering. The experimental I–V data of the device quite well obey the thermionic emission model at 300 and 320 K, respectively. The ideality factor and barrier height values have changed by change of the sample temperature, the case has been attributed to the presence of the lateral inhomogeneities of the barrier height. The barrier inhomogeneity has been explained by the Gaussian distribution models of barrier heights suggested by some authors, Y.-L. Jiang et al. [Chin. Phys. Lett. 19, 553 (2002)]; Y.-L. Jiang et al. [J. Appl. Phys. 93, 866 (2003)], and S. Chand, J. Kumar [Appl. Phys. A 65, 497 (1997)]. It has been seen that the SBH inhomogeneity of our Ni/n-GaAs SBD can be well described by Gaussian distribution model suggested by Y.-L. Jiang et al. [Chin. Phys. Lett. 19, 553 (2002)]; Y.-L. Jiang et al. [J. Appl. Phys. 93, 866 (2003)] over whole measurement temperature range. Moreover, the modified ln() versus plot is obtained using a method developed for T0 anomaly in the literature. Richardson constant value of 3.37 A cm-2 K-2 for n-type GaAs was obtained from the modified Richardson plot.
PACS: 73.30.+y – Surface double layers, Schottky barriers, and work functions / 73.40.-c – Electronic transport in interface structures / 73.40.Ei – Rectification / 73.40.Sx – Metal-semiconductor-metal structures
© EDP Sciences, 2008
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