Eur. Phys. J. Appl. Phys.
Volume 55, Number 3, September 2011
|Number of page(s)||4|
|Section||Semiconductors and Devices|
|Published online||18 August 2011|
Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode
Laboratoire de Micro-Optoélectroniques et Nanostructures, Université de Monastir, Tunisia
2 Institut d’Électronique de Microélectronique et de Nanotechnologie IEMN, Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, France
a e-mail: email@example.com
Accepted: 13 May 2011
Published online: 18 August 2011
In this work we report on the characteristics of (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques such as capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements were used to characterize the diodes. We observed an hysteresis phenomenon on the C-V characteristics in the Schottky diode. The parasitic effect can be attributed to the presence of traps in the heterostructure. Deep defects analysis was performed by deep-level transient spectroscopy (DLTS). One hole trap have been detected with an activation energy and a capture cross-section of 0.75 eV and 1.093 × 10−11 cm2. The localization and the identification of this trap have occurred and a correlation between the defect and the hysteresis phenomenon has been discussed. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.
© EDP Sciences, 2011
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.