Eur. Phys. J. Appl. Phys.
Volume 41, Number 3, March 2008
|Page(s)||195 - 200|
|Section||Semiconductors and Related Materials|
|Published online||12 March 2008|
Subband structure of p-type δ-doped GaAs as dependent on the acceptor concentration and the layer thickness
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
2 Dokuzeylul University, Department of Physics, Izmir, Turkey
Corresponding author: firstname.lastname@example.org
Accepted: 12 December 2007
Published online: 12 March 2008
For a uniform distribution we have theoretically studied the subband structure of p-type δ-doped GaAs inserted into a quantum well at T = 0 K. We will investigate the influence of the δ-doping concentration and the layer thickness. The electronic properties such as the depth of confining potential, the density profile, the Fermi level, the subband energies and the subband populations have been calculated by solving the Schrödinger and Poisson equations self consistently. In this study, we have seen that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers.
PACS: 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures / 73.20.At – Surface states, band structure, electron density of states
© EDP Sciences, 2008
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.