| Issue |
Eur. Phys. J. Appl. Phys.
Volume 41, Number 3, March 2008
|
|
|---|---|---|
| Page(s) | 195 - 200 | |
| Section | Semiconductors and Related Materials | |
| DOI | https://doi.org/10.1051/epjap:2008018 | |
| Published online | 12 March 2008 | |
https://doi.org/10.1051/epjap:2008018
Subband structure of p-type δ-doped GaAs as dependent on the acceptor concentration and the layer thickness
1
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
2
Dokuzeylul University, Department of Physics, Izmir, Turkey
Corresponding author: eozturk@cumhuriyet.edu.tr
Received:
5
October
2007
Accepted:
12
December
2007
Published online:
12
March
2008
For a uniform distribution we have theoretically studied the subband structure of p-type δ-doped GaAs inserted into a quantum well at T = 0 K. We will investigate the influence of the δ-doping concentration and the layer thickness. The electronic properties such as the depth of confining potential, the density profile, the Fermi level, the subband energies and the subband populations have been calculated by solving the Schrödinger and Poisson equations self consistently. In this study, we have seen that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers.
PACS: 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures / 73.20.At – Surface states, band structure, electron density of states
© EDP Sciences, 2008
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