| Issue |
Eur. Phys. J. Appl. Phys.
Volume 41, Number 3, March 2008
|
|
|---|---|---|
| Page(s) | 201 - 204 | |
| Section | Semiconductors and Related Materials | |
| DOI | https://doi.org/10.1051/epjap:2008023 | |
| Published online | 09 April 2008 | |
https://doi.org/10.1051/epjap:2008023
Ultrafast transport transient in photoexcited ZnSe
Departamento de Matemática e Física,
Universidade Católica de Goiás, Caixa Postal 86, 74605-010,
Goiânia, Goiás, Brazil
Corresponding author: cloves@ucg.br
Received:
19
May
2007
Revised:
20
November
2007
Accepted:
15
January
2008
Published online:
9
April
2008
A theoretical study (by using the Nonequilibrium Statistical Operator Method) is performed on the ultrafast transient transport properties of photoexcited carriers in ZnSe subjected to electric fields up to 35 kV/cm. The electron and hole drift velocity evolution towards the steady state present maxima in subpicosecond scale.
PACS: 78.47.+p – Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter / 78.55.Et – II-VI semiconductors / 72.20.Ht – High-field and nonlinear effects
© EDP Sciences, 2008
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