Eur. Phys. J. Appl. Phys.
Volume 41, Number 3, March 2008
|Page(s)||201 - 204|
|Section||Semiconductors and Related Materials|
|Published online||09 April 2008|
Ultrafast transport transient in photoexcited ZnSe
Departamento de Matemática e Física,
Universidade Católica de Goiás, Caixa Postal 86, 74605-010,
Goiânia, Goiás, Brazil
Corresponding author: firstname.lastname@example.org
Revised: 20 November 2007
Accepted: 15 January 2008
Published online: 9 April 2008
A theoretical study (by using the Nonequilibrium Statistical Operator Method) is performed on the ultrafast transient transport properties of photoexcited carriers in ZnSe subjected to electric fields up to 35 kV/cm. The electron and hole drift velocity evolution towards the steady state present maxima in subpicosecond scale.
PACS: 78.47.+p – Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter / 78.55.Et – II-VI semiconductors / 72.20.Ht – High-field and nonlinear effects
© EDP Sciences, 2008
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.