Eur. Phys. J. AP
Volume 21, Number 2, February 2003
|Page(s)||91 - 95|
|Section||Semiconductors and Devices|
|Published online||29 November 2002|
Electronic properties of two coupled Si δ-doped GaAs structures
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
2 Dokuzeylul University, Department of Physics, Izmir, Turkey
Corresponding author: firstname.lastname@example.org
Revised: 12 July 2002
Accepted: 1 October 2002
Published online: 29 November 2002
We have theoretically investigated the subband structure of two coupled Si δ-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The electronic properties such as the effective potential, the density profile, the subband energies, the subband populations and Fermi energy have been calculated by solving Schrödinger and Poisson equations self-consistently. In this study, we have seen that the subband structure is quite sensitive to the separation between the two doping layers. We conclude that, if the coupling between two δ-doped GaAs layers is significant, the mobility of electrons in this structure is very high compared to single δ-doped structures because of the strong overlap between the electrons and the ionized donors in single δ-doped structures.
PACS: 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures
© EDP Sciences, 2003
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