Eur. Phys. J. Appl. Phys.
Volume 24, Number 3, December 2003
|Page(s)||189 - 194|
|Section||Semiconductors and Devices|
|Published online||03 October 2003|
Influence of an applied electric field on the electronic properties of Si δ-doped GaAs
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
2 Dokuzeylul University, Department of Physics, Izmir, Turkey
Corresponding author: firstname.lastname@example.org
Revised: 9 June 2003
Accepted: 24 July 2003
Published online: 3 October 2003
We have theoretically studied the electronic structure of Si δ-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence of the electric field on the donor distribution thickness as different from other authors. The present method is based on a self-consistent solution of the Schrödinger and Poisson equations. From our calculations, we have seen that a high applied electric field is significantly changed the subband structure of the δ-doped GaAs and the change of the electronic properties as dependent on the applied electric field is more pronounced at wide doping thickness. The high electric fields can induce a spatial separation between confined electrons and ionized dopants in the δ-doped GaAs structure resulting in enhanced free carrier mobility in semiconductor devices.
PACS: 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
© EDP Sciences, 2003
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