Eur. Phys. J. Appl. Phys.
Volume 29, Number 1, January 2005
|Page(s)||27 - 31|
|Section||Semiconductors and Devices|
|Published online||21 December 2004|
Subband structure and band bending in symmetric modulation-doped double quantum wells
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
2 Dokuz Eylul University, Department of Physics, Izmir, Turkey
Corresponding author: firstname.lastname@example.org
Revised: 30 January 2004
Accepted: 1 July 2004
Published online: 21 December 2004
We have calculated the subband structure and confinement potential of modulation-doped GaAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are determined by solving the Schrödinger and Poisson equations self-consistently. To understand the exchange correlation potential effects on the band bending and subband populations, this potential has been included in the calculation at 0 K and, at room temperature. We find that at low doping concentrations the effect of the exchange correlation potential is more pronounced on the subband populations.
PACS: 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures
© EDP Sciences, 2005
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