Eur. Phys. J. AP
Volume 21, Number 2, February 2003
|Page(s)||97 - 101|
|Section||Semiconductors and Devices|
|Published online||29 November 2002|
Influence of temperature on the electronic properties of Si δ-doped GaAs structures
Cumhuriyet University, Department of Physics,
58140 Sivas, Turkey
2 Dokuzeylul University, Department of Physics, Izmir, Turkey
Corresponding author: firstname.lastname@example.org
Revised: 20 March 2002
Accepted: 4 October 2002
Published online: 29 November 2002
We have investigated theoretically the electronic structure of Si δ-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and the donor thickness. In this study, nonuniform distribution is different from Gaussian distribution used by other authors. From the self-consistent calculation, we have seen that at room temperature carriers which appear due to the impurity atoms are more efficient than temperature on the subband structure.
PACS: 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures
© EDP Sciences, 2003
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