| Issue |
Eur. Phys. J. AP
Volume 21, Number 2, February 2003
|
|
|---|---|---|
| Page(s) | 97 - 101 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2002111 | |
| Published online | 29 November 2002 | |
https://doi.org/10.1051/epjap:2002111
Influence of temperature on the electronic properties of Si δ-doped GaAs structures
1
Cumhuriyet University, Department of Physics,
58140 Sivas, Turkey
2
Dokuzeylul University, Department of Physics, Izmir, Turkey
Corresponding author: eozturk@cumhuriyet.edu.tr
Received:
1
October
2001
Revised:
20
March
2002
Accepted:
4
October
2002
Published online:
29
November
2002
We have investigated theoretically the electronic structure of Si δ-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and the donor thickness. In this study, nonuniform distribution is different from Gaussian distribution used by other authors. From the self-consistent calculation, we have seen that at room temperature carriers which appear due to the impurity atoms are more efficient than temperature on the subband structure.
PACS: 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures
© EDP Sciences, 2003
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.