Eur. Phys. J. Appl. Phys.
Volume 40, Number 2, November 2007
|Page(s)||149 - 154|
|Section||Surfaces, Interfaces and Films|
|Published online||21 September 2007|
Effect of annealing on In2S3 thin films prepared by flash evaporation
Laboratoire Matériaux et Énergies Renouvelables (LMER), Université Ibn Zohr Dép. physique, Faculté des sciences, BP 8106, Hay Dakhla, 80000 Agadir, Morocco
2 Laboratoire de physique des solides et des couches minces, Département de physique, Faculté des sciences Semlalia, BP S/3293, Marrakech, Morocco
3 Structure des Interfaces et Fonctionnalités des Couches Minces (SIFCOM), Ensicaen, Bd Maréchal Juin, 14050 Caen, France
Corresponding author: firstname.lastname@example.org
Revised: 17 July 2007
Accepted: 30 July 2007
Published online: 21 September 2007
In2S3 thin films were deposited by flash evaporation of In2S3 powder. The effect of annealing in vacuum and under sulphur and oxygen atmosphere on the structural, compositional and optical properties of these films was investigated. X-ray diffraction studies reveal that the as-deposited films are amorphous. The formation of β-In2S3 phase is obtained after annealing under vacuum at 693 K or under sulphur pressure at a lower annealing temperature (573 K). The EDAX analysis reveals that the sulphurized films are nearly stoichiometric and those annealed in vacuum are sulphur deficient. Optical transmission spectra showed a slight shift of the absorption edge towards lower wavelengths. The optical gap value varied between 2.4 and 3 eV as a function of the film thickness, the annealing temperature and the atmosphere ambient.
PACS: 81.15.Ef – Vacuum deposition / 81.15.-z – Methods of deposition of films and coatings; film growth and epitaxy / 68.55.-a – Thin film structure and morphology
© EDP Sciences, 2007
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