Eur. Phys. J. Appl. Phys.
Volume 33, Number 2, February 2006
|Page(s)||77 - 81|
|Section||Semiconductors and Related Materials|
|Published online||26 January 2006|
Temperature effect on the growth of In2S3 by thermal evaporation technique
Photovoltaic and semiconductor materials laboratory,
National Engineering School of Tunis, Belvedere, PO Box 37, 1002 Tunis,
Corresponding author: firstname.lastname@example.org
Revised: 16 September 2005
Accepted: 29 September 2005
Published online: 26 January 2006
The vacuum thermal evaporation technique (VTET) allows the deposition of highly homogeneous thin films with excellent step coverage. This method has already shows promising results for the deposition of indium sulphide at different substrate temperature between 453 and 513 K. Indium sulphide thin films have been synthesised and deposited by vacuum thermal evaporation technique. Experimental parameters have been adjusted in order to obtain a high band gap and low absorption material at low deposition temperature, as required for photovoltaic applications. The structural, morphological and optical properties were characterised by X-ray diffraction analysis, Surface Electron Microscopy and spectrophotometry. The VTET-In2S3 thin films are homogeneous and crystallised at 513 K with direct band gap values of about 2 eV.
PACS: 61.10.Nz – X-ray diffraction / 61.82.Fk – Semiconductors / 67.80.Gb – Thermal properties
© EDP Sciences, 2006
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