Eur. Phys. J. Appl. Phys.
Volume 40, Number 2, November 2007
|Page(s)||145 - 148|
|Section||Microelectronics and Optoelectronics|
|Published online||21 September 2007|
In2O3/Si heterojunction solar cells fabricated by InN oxidation
Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China
Corresponding author: firstname.lastname@example.org
Revised: 16 July 2007
Accepted: 2 August 2007
Published online: 21 September 2007
The present paper reports on the fabrication of In2O3 layers by oxidation of InN thin films deposited on n-type silicon substrate by magnetron reactive sputtering. The subsequent solar cells using the resulting In2O3/Si heterojunctions exhibit an ideality factor, deduced from current-voltage (I – V) characteristics of around 2.52 at a forward bias of 0.5 V. Other measured parameters were the short-circuit current (Isc), the open-circuit voltage (Voc), the maximum output power (Pm), the fill factor (FF) and the efficiency (η), which had values of were 3.17 mA, 0.75 V, 0.869 mW, 0.365 and 9.66 %, respectively, under AM 1.5 illumination. The value of series resistance was around 107 Ω. In2O3 films formed by the oxidation of InN have a higher open-circuit voltage than In2O3-based solar cells formed by the oxidation of indium.
PACS: 71.20.Nr – Semiconductor compounds / 77.84.Bw – Elements, oxides, nitrides, borides, carbides, chalcogenides, etc. / 85.60.Dw – Photodiodes; phototransistors; photoresistors
© EDP Sciences, 2007
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