In₂O₃/Si heterojunction solar cells fabricated by InN oxidation

Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China

Corresponding author: ocean@ntut.edu.tw

Received: 21 February 2007
Revised: 16 July 2007
Accepted: 2 August 2007
Published online: 21 September 2007

Abstract

The present paper reports on the fabrication of In₂O₃ layers by oxidation of InN thin films deposited on n-type silicon substrate by magnetron reactive sputtering. The subsequent solar cells using the resulting In₂O₃/Si heterojunctions exhibit an ideality factor, deduced from current-voltage (I – V) characteristics of around 2.52 at a forward bias of 0.5 V. Other measured parameters were the short-circuit current (I_sc), the open-circuit voltage (V_oc), the maximum output power (P_m), the fill factor (FF) and the efficiency (η), which had values of were 3.17 mA, 0.75 V, 0.869 mW, 0.365 and 9.66 %, respectively, under AM 1.5 illumination. The value of series resistance was around 107 Ω. In₂O₃ films formed by the oxidation of InN have a higher open-circuit voltage than In₂O₃-based solar cells formed by the oxidation of indium.