Issue |
Eur. Phys. J. Appl. Phys.
Volume 92, Number 3, December 2020
|
|
---|---|---|
Article Number | 30301 | |
Number of page(s) | 7 | |
Section | Thin Films | |
DOI | https://doi.org/10.1051/epjap/2020200274 | |
Published online | 27 November 2020 |
https://doi.org/10.1051/epjap/2020200274
Regular Article
Characterization of silver doped In2S3 films
1
Department of Electrical Engineering, Faculty of Ghazi Tabatabai, West Azarbaijan Branch, Technical and Vocational University, Urmia, Iran
2
Young Researchers and Elite Club Islamic Azad University, Urmia Branch, Urmia, Iran
3
Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran
* e-mail: parisa.esmaili2018@gmail.com
Received:
24
August
2020
Received in final form:
18
October
2020
Accepted:
20
October
2020
Published online: 27 November 2020
Silver doped Indium sulphide thin films with different [Ag/In] molar ratio concentrations (0, 0.9, 1.0, 1.1) were deposited on glass substrates using chemical bath deposition method. The structural, morphological, optical and electrical properties are characterized using XRD, EDAX, SEM, AFM, spectrophotometer and Hall measurement system, respectively. Kramers-Kronig method was used to obtain optical constants of the films. It is found that Ag can change physical properties of Indium sulfide thin films, depending on the Ag concentration. XRD results show the incorporation of Ag concentration did not change the structure of In2S3. Doped films had rough surfaces. As the [Ag/In] molar ratio increased, conductivity increases and optical direct band gap energy decreases from 2.75 to 2.38 eV.
© EDP Sciences, 2020
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