| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 67 - 73 | |
| Section | Invited papers | |
| DOI | https://doi.org/10.1051/epjap:2004076 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004076
Spectroscopic techniques for the assessment of optoelectronic materials: application to laser diodes
Física de la Materia Condensada ETS Ingenieros Industriales
47011 Valladolid, Spain
Corresponding author: jimenez@fmc.uva.es
Received:
24
September
2003
Accepted:
18
December
2003
Published online: 15 July 2004
Spectroscopic techniques are necessary for the characterization of optoelectronic materials. Among the experimental means used for such characterization, luminescence techniques play a relevant role because they supply information about the mechanisms generating light and are sensitive to structural aspects. Raman spectroscopy provides useful information about alloy instabilities and is sensitive to stress and temperature. Results concerning optoelectronic materials are presented with special emphasis on the application of these techniques to the degradation of laser diodes.
PACS: 42.55.Px – Semiconductor lasers; laser diodes / 78.60.Hk – Cathodoluminescence, ionoluminescence / 78.30.Fs – III-V and II-VI semiconductors
© EDP Sciences, 2004
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