Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||67 - 73|
|Published online||15 July 2004|
Spectroscopic techniques for the assessment of optoelectronic materials: application to laser diodes
Física de la Materia Condensada ETS Ingenieros Industriales
47011 Valladolid, Spain
Corresponding author: firstname.lastname@example.org
Accepted: 18 December 2003
Published online: 15 July 2004
Spectroscopic techniques are necessary for the characterization of optoelectronic materials. Among the experimental means used for such characterization, luminescence techniques play a relevant role because they supply information about the mechanisms generating light and are sensitive to structural aspects. Raman spectroscopy provides useful information about alloy instabilities and is sensitive to stress and temperature. Results concerning optoelectronic materials are presented with special emphasis on the application of these techniques to the degradation of laser diodes.
PACS: 42.55.Px – Semiconductor lasers; laser diodes / 78.60.Hk – Cathodoluminescence, ionoluminescence / 78.30.Fs – III-V and II-VI semiconductors
© EDP Sciences, 2004
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.