| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 465 - 468 | |
| Section | Defects in SC lasers and other devices | |
| DOI | https://doi.org/10.1051/epjap:2004052 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004052
Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers
1
Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain
2
CNRS-LPN, Route de Nozay, 91460 Marcoussis, France
3
Alcatel R&I, now with Avanex France, Route de Villejust, 91625 Nozay, France
Corresponding author: jimenez@fmc.uva.es
Received:
19
September
2003
Accepted:
28
January
2004
Published online: 15 July 2004
The degradation behaviour of two InGaAs/AlGaAs laser structures differing only in the Zn doping concentration of the p+ GaAs contact layer has been compared. The ageing tests used in this comparison are performed on lasers with Anti-Reflection (AR) coatings on both facets, so as to increase the carrier density in the quantum well and the gradual degradation rate. This kind of ageing test has been discussed in a previous paper, where a possible effect of Zn diffusion was suspected. The defects generated during ageing are studied by Low Temperature (80 K)—Spectrally Resolved Cathodo-Luminescence (LT-SRCL), Cathodo-Luminescence Imaging (CLI) and Transmission Electron Microscopy (TEM). The impact of the acceptor concentration in the contact layer is thus clarified.
PACS: 78.60.Hk – Cathodoluminescence, ionoluminescence / 78.67.De – Quantum wells
© EDP Sciences, 2004
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