| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 451 - 454 | |
| Section | Defects in SC lasers and other devices | |
| DOI | https://doi.org/10.1051/epjap:2004098 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004098
Simultaneous quantitative determination of strain and defect profiles within the active region along high-power diode laser bars by micro-photocurrent mapping
1
Max-Born Institut für nichtlineare Optik und
Kurzzeitspektroskopie, Max Born Strasse 2A, 12489 Berlin, Germany
2
THALES Research & Technology, Domaine de Corbeville, 91404 Orsay Cedex,
France
Corresponding author: gerhardt@mbi-berlin.de
Received:
14
July
2003
Accepted:
9
December
2003
Published online: 15 July 2004
We present microscopically-resolved photocurrent spectroscopy as a new powerful analytical tool for the simultaneous detection of packaging-induced strain and defects in GaAs-based high-power laser diode arrays (cm-bars). Using the Fourier-transform (FT) technique we measure photocurrent (PC) spectra with a high spatial resolution of better than 50 μm at the active layer of the device. By analyzing this data, spatially resolved distributions of strain as well as of defects are obtained. So far, PC measurements at cm-bars have only provided an overview of the distribution of strain and defects in the device on an emitter-by-emitter scale. The high spatial resolution now allows examination of the distribution of strain and defects even within one single emitter. This is essential for obtaining insights into device failure mechanisms and also makes a substantial contribution for improving device performance and reliability.
PACS: 7.57.Ty – Infrared spectrometers, auxiliary equipment, and techniques / 42.55.Px – Semiconductor lasers; laser diodes / 71.70.Fk – Strain-induced splitting
© EDP Sciences, 2004
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