Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||75 - 79|
|Section||Nanostructures and near-field probe techniques 1|
|Published online||15 July 2004|
Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix
Universidad del País Vasco, Departamento de
Física Aplicada II, Lejona, Vizcaya, Spain
2 Universidad Complutense de Madrid, Facultad de Ciencias Físicas, Departamento de Física de Materiales, 28040 Madrid, Spain
3 Department of Electrical and Electronic Engineering, Imperial College of Science and Technology, London, UK
Corresponding author: firstname.lastname@example.org
Accepted: 9 December 2003
Published online: 15 July 2004
The luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O has been studied by photoluminescence (PL) and cathodoluminescence (CL) in the scanning electron microscope. Annealing in nitrogen causes the formation of oxide species and Er-Si complexes or precipitates as well as spectral changes in the visible and infrared ranges. The main CL emission takes place in the visible range while PL spectra reveal intense visible and infrared emission. CL spectra show blue-violet, or green, emission bands whose relative intensities depend on the post-implantation annealing temperature. The PL spectra show a blue-violet band with a series of lines in the violet region related to phonon assisted transitions as well as different emission bands in the range 1200–1500 nm. The influence of the annealing-induced structural changes on the observed spectra is discussed.
PACS: 61.72.Tt – Doping and impurity implantation in germanium and silicon / 78.55.-m – photoluminescence, properties and materials
© EDP Sciences, 2004
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