Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||461 - 464|
|Section||Defects in SC lasers and other devices|
|Published online||15 July 2004|
Quantitative spectroscopic strain analysis of AlGaAs-based high-power diode laser devices
Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie,
Max-Born-Str. 2A, Germany
2 Physics Department, 566 Brownson Rd., U. S. Naval Academy, Annapolis, MD 21402, USA
Corresponding author: firstname.lastname@example.org
Accepted: 28 January 2004
Published online: 15 July 2004
Results of quantitative spectroscopic analysis of packaging-induced strain in In0.06Ga0.86Al0.08As/Ga0.7Al0.3As/GaAs high-power ‘cm-bars’ diode laser arrays are presented. Theoretically, the influence on the results of particular device structure properties, such as intrinsic strain, is analyzed. We compare these theoretical results, which are based on a unaxial stress model, with photocurrent data. For In-soldered devices on copper heatsinks, we find a strain difference of (0.050 ± 0.015)% between edge and center of the device. Almost complete strain-relaxation toward the device edges is experimentally demonstrated. The general approach is also applicable to the analysis of all data that refer to changes of the electronic bandstructure, such as absorption and photoluminescence.
PACS: 42.55.Px – Semiconductor lasers; laser diodes / 71.55.Eq – III-V semiconductors / 62.20.Fe – Deformation and plasticity (including yield, ductility, and superplasticity)
© EDP Sciences, 2004
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