| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 59 - 65 | |
| Section | Invited papers | |
| DOI | https://doi.org/10.1051/epjap:2004073 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004073
From photon emission microscopy to Raman spectroscopy: Failure analysis in microelectronics
1
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium
2
Now at Lucent Technologies, Bell Laboratories, Murray Hill, NJ, USA
Corresponding author: dewolfi@imec.be
Received:
9
July
2003
Accepted:
18
December
2003
Published online: 15 July 2004
This paper discusses two techniques that have, at first sight, completely different applications: photon emission microscopy (PEM) and micro-Raman spectroscopy (μRS). We explain the principles of these techniques, their application domain, and we will show that they can in some cases offer complementary information, and be applied to common or similar problems.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling / 85.30.-z – Semiconductor devices / 78.30.Er – Solid metals and alloys
© EDP Sciences, 2004
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