Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||59 - 65|
|Published online||15 July 2004|
From photon emission microscopy to Raman spectroscopy: Failure analysis in microelectronics
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium
2 Now at Lucent Technologies, Bell Laboratories, Murray Hill, NJ, USA
Corresponding author: email@example.com
Accepted: 18 December 2003
Published online: 15 July 2004
This paper discusses two techniques that have, at first sight, completely different applications: photon emission microscopy (PEM) and micro-Raman spectroscopy (μRS). We explain the principles of these techniques, their application domain, and we will show that they can in some cases offer complementary information, and be applied to common or similar problems.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling / 85.30.-z – Semiconductor devices / 78.30.Er – Solid metals and alloys
© EDP Sciences, 2004
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.