Eur. Phys. J. AP
Volume 23, Number 1, July 2003
|Page(s)||5 - 9|
|Section||Semiconductors and Devices|
|Published online||29 November 2002|
Identification of hydrogen related defects in proton implanted float-zone silicon
Royal Institute of Technology, Solid State Electronics, Electrum 229, 16440 Kista-Stockholm, Sweden
2 Oslo University, Department of Physics, Physical Electronics, PB 1048 Blindern, 0316 Oslo, Norway
3 Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Canberra ACT 0200, Australia
4 CNR-IMETEM, Stradale Primosole 50, 95121 Catania, Italy
Corresponding author: email@example.com
Accepted: 18 July 2002
Published online: 29 November 2002
Hydrogen related defects in high purity n-type float zone silicon samples have been studied by means of Deep Level Transient Spectroscopy. They were introduced, as well as the characteristic vacancy-oxygen (VO) and divacancy () centers, by MeV proton implantation. Two hydrogen related defect levels were resolved at 0.32 eV and 0.45 eV below the conduction band edge (Ec). Careful annealing studies indicate strongly that a third hydrogen related level, overlapping with the singly negative charge state level of , is also present in the implanted samples. The annealing behavior of the hydrogen related defects has been compared with literature data leading to a rather firm identification. The eV level originates from a VO center partly saturated with hydrogen (a VOH complex) while the eV level may be ascribed to a complex involving a monovacancy and a hydrogen atom (a VH complex). The third hydrogen related defect is tentatively ascribed to a complex involving a hydrogen atom and a divacancy (a complex).
PACS: 61.72.Cc – Kinetics of defect formation and annealing / 61.72.Ji – Point defects (vacancies, interstitials, color centers, etc.) and defect clusters / 61.82.Fk – Semiconductors
© EDP Sciences, 2003
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