| Issue |
Eur. Phys. J. AP
Volume 23, Number 1, July 2003
|
|
|---|---|---|
| Page(s) | 11 - 18 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2002116 | |
| Published online | 29 November 2002 | |
https://doi.org/10.1051/epjap:2002116
Deuteron implantation into hexagonal silicon carbide: defects and deuterium behaviour
1
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft,
The Netherlands
2
Institute of Crystallography, Leninsky Pr. 59, 119333 Moscow, Russia
3
Utrecht University, Princetonplein 5, 3584 CC Utrecht, Postbus 80000, 3508 TA Utrecht,
The Netherlands
4
CERI/CEA, 3A rue de Ferollerie, 45071 Orleans, France
Corresponding authors: a_shiryaev@mailru.com a.vanveen@iri.tudelft.nl
Received:
23
May
2002
Revised:
27
July
2002
Accepted:
31
July
2002
Published online:
29
November
2002
Results of the comprehensive study of deuterium-implanted hexagonal SiC (4H and 6H) using optical absorption and infrared measurements, elastic recoil detection analysis, thermal desorption and positron annihilation spectroscopies are reported. It is shown that implanted deuterium mainly forms bonds with lattice atoms. The amount of deuterium in the form of interstitial molecules and in vacancies is considerably smaller. Ion implantations with fluences exceeding 1015 D+/cm−2 create point defects in concentrations sufficiently high for complete positron trapping. Recrystallisation of the amorphised SiC does not remove the positron traps.
PACS: 61.72.Ji – Point defects (vacancies, interstitials, color centers, etc.) and defect clusters / 61.72.Ww – Doping and impurity implantation in other materials / 61.82.Fk – Semiconductors
© EDP Sciences, 2003
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