Eur. Phys. J. AP
Volume 3, Number 1, July 1998
|Page(s)||49 - 52|
|Published online||15 July 1998|
The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects*
Institut National des Sciences Appliquées et de Technologie, Département de Génie Physique
et Instrumentation, Centre Urbain Nord, BP 676, 1080 Tunis Cedex, Tunisia
2 Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
3 Laboratoire de Thermodynamique Appliquée (C.N.R.S. - U.P.R.E.S.-A), Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
Revised: 9 February 1998
Accepted: 2 March 1998
Published online: 15 July 1998
The present study deals with the investigation of electrically active damage induced by direct and through protecting oxide layer implantation of 11B+ ions. The residual defects have been determined by means of Deep Level Transient Spectroscopy (DLTS). It has been found that the number of defects is practically reduced to one centre when the implantation is performed through an oxide layer. The defect spectrum evolution, under the effect of the implant mass and the RTA treatments, has been also investigated. The defect generation kinetics, under annealing treatments, is found strongly depending on 11B+ ionic number reaching the substrate.
PACS: 73.40.Sx – Metal-semiconductor-metal structures / 73.20.Hb – Impurity and defect levels; energy states of adsorbed species / 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions and heterojunctions
© EDP Sciences, 1998
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