Eur. Phys. J. AP
Volume 6, Number 2, May 1999
|Page(s)||121 - 130|
|Published online||15 May 1999|
A comparative study of radiation damage on high resistivity silicon
LERMAT ISMRA (UPRESA 6004), 6 boulevard Maréchal Juin, 14050 Caen, France
2 INFN, Sezione di Milano, via Celoria 16, 20100 Milano, Italia
Corresponding author: email@example.com
Revised: 20 November 1998
Accepted: 18 January 1999
Published online: 15 May 1999
In future particle accelerators, silicon detectors will be exposed with large doses of different types of radiation. To understand the corresponding produced damage mechanisms, a systematic study of the influence of the irradiation on the silicon from which the detectors are made has to be carried out. Samples of low n-doped silicon have been irradiated with swift krypton ions , neutrons from a nuclear reactor and energetic electrons . Resistivity and Hall effect measurements performed after irradiation show that the silicon is changed to a quasi-intrinsic state, characterized by a very high resistivity. The electrically active defects responsible for that evolution are Maynly acceptor centers, namely divacancy and/or vacancy-doping complexes. Besides, for the highest fluences, only the appearance of a donor center located at about 0.59 eV below the conduction band may explain the observed stabilization of the Fermi level at 0.61 eV. Finally, using a simulation method, the rates of generation of the different defects are estimated.
PACS: 61.80.Fe – Electrons and positron radiation effects / 61.80.Hg – Neutron radiation effects / 61.80.Jh – Ion radiation effects
© EDP Sciences, 1999
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