Foreword SDE p. 3 Bernard Pichaud Published online: 27 June 2003 DOI: https://doi.org/10.1051/epjap:2003046 AbstractPDF (28.48 KB)
Identification of hydrogen related defects in proton implanted float-zone silicon p. 5 P. Lévêque, A Hallén, B. G. Svensson, J. Wong-Leung, C. Jagadish and V. Privitera Published online: 29 November 2002 DOI: https://doi.org/10.1051/epjap:2002113 AbstractPDF (354.2 KB)References
Deuteron implantation into hexagonal silicon carbide: defects and deuterium behaviour p. 11 A. Shiryaev, A. van Veen, A. Rivera, M. van Huis, T. Bus, W. M. Arnoldbik, N. Tomozeiu, F. H. P. M. Habraken, R. Delamare and E. Ntsoenzok Published online: 29 November 2002 DOI: https://doi.org/10.1051/epjap:2002116 AbstractPDF (206.0 KB)References
Evolution of He-induced cavities and related defects in silicon studied by direct scattering of channeled particles p. 19 A. Grob, J. J. Grob and F. Roqueta Published online: 29 November 2002 DOI: https://doi.org/10.1051/epjap:2002115 AbstractPDF (256.3 KB)References
μ-Raman investigations of plasma hydrogenated silicon p. 25 R. Job, A. G. Ulyashin, W. R. Fahrner, M.-F. Beaufort and J.-F. Barbot Published online: 25 February 2003 DOI: https://doi.org/10.1051/epjap:2003013 AbstractPDF (1.652 MB)References
p-type doping by platinum diffusion in low phosphorus doped silicon p. 33 L. Ventura, B. Pichaud, W. Vervisch and F. Lanois Published online: 29 November 2002 DOI: https://doi.org/10.1051/epjap:2002114 AbstractPDF (178.7 KB)References
In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiation p. 39 M.-O. Ruault, M. C. Ridgway, F. Fortuna, H. Bernas and J. S. Williams Published online: 11 December 2002 DOI: https://doi.org/10.1051/epjap:2002120 AbstractPDF (217.4 KB)References
Impact of gettering by helium implantation on boron and iron segregation p. 41 F. Cayrel, D. Alquier, L. Ventura and F. Roqueta Published online: 27 June 2003 DOI: https://doi.org/10.1051/epjap:2003048 AbstractPDF (402.4 KB)References
The role of a top oxide layer in cavities formed by MeV He implantation into Si p. 45 C. Liu, E. Ntsoenzok, R. Delamare, D. Alquier and G. Regula Published online: 12 June 2003 DOI: https://doi.org/10.1051/epjap:2003038 AbstractPDF (1.947 MB)References
Structure related magnetic properties of MnZn ferrite with ultra-fine grain structure p. 49 J. Moulin, F. Mazaleyrat, Y. Champion, P. Langlois, M. Lécrivain, J. M. Grenèche, D. Michel and R. Barrué Published online: 12 June 2003 DOI: https://doi.org/10.1051/epjap:2003040 AbstractPDF (1.100 MB)References
Bus bar copper losses computation p. 55 M. Besacier, J. M. Guichon, J. L. Schanen and J. Roudet Published online: 12 June 2003 DOI: https://doi.org/10.1051/epjap:2003041 AbstractPDF (348.5 KB)References
A new numerical technique of electric field determination within dielectric materials plate and cable using the TSM method p. 63 E. Belgaroui, H. Guermazi, S. Agnel, Y. Mlik and A. Toureille Published online: 12 June 2003 DOI: https://doi.org/10.1051/epjap:2003042 AbstractPDF (436.3 KB)References