| Issue |
Eur. Phys. J. AP
Volume 21, Number 2, February 2003
|
|
|---|---|---|
| Page(s) | 103 - 106 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2002121 | |
| Published online | 19 December 2002 | |
https://doi.org/10.1051/epjap:2002121
Three-dimensional device optimization by Green's functions
1
Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, 1040 Vienna, Austria
2
Austriamicrosystems, Unterpremstätten, Austria
Received:
21
June
2002
Accepted:
14
October
2002
Published online:
19
December
2002
Optimizing process- and layout-design in the development of modern electronic devices is key to achieve required characteristics. Coming along with the growing complexity of device structures, associated effects must be considered in an even more complex manner. The use of three-dimensional process- and device-simulation tools is inevitable. Because of the huge effort concerning computer resources from three-dimensional simulations it is of big interest to enable efficient ways for optimization, as early as possible in process flow. Hence this work shows, how it was possible, to optimize a high-voltage PMOS transistor before starting a complex three-dimensional device simulation.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling
© EDP Sciences, 2003
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.