Eur. Phys. J. AP
Volume 21, Number 2, February 2003
|Page(s)||103 - 106|
|Section||Semiconductors and Devices|
|Published online||19 December 2002|
Three-dimensional device optimization by Green's functions
Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, 1040 Vienna, Austria
2 Austriamicrosystems, Unterpremstätten, Austria
Accepted: 14 October 2002
Published online: 19 December 2002
Optimizing process- and layout-design in the development of modern electronic devices is key to achieve required characteristics. Coming along with the growing complexity of device structures, associated effects must be considered in an even more complex manner. The use of three-dimensional process- and device-simulation tools is inevitable. Because of the huge effort concerning computer resources from three-dimensional simulations it is of big interest to enable efficient ways for optimization, as early as possible in process flow. Hence this work shows, how it was possible, to optimize a high-voltage PMOS transistor before starting a complex three-dimensional device simulation.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling
© EDP Sciences, 2003
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