Eur. Phys. J. Appl. Phys.
Volume 89, Number 2, February 2020
Disordered Semiconductors: Physics and Applications
|Number of page(s)||5|
|Published online||09 April 2020|
Effect of heat treatments on the electronic properties of indium sulfide films★
Department of Physics, Graduate School of Science and Technology, Gunma University, Maebashi 371-8510, Japan
* e-mail: email@example.com
Received in final form: 5 February 2020
Accepted: 10 March 2020
Published online: 9 April 2020
The optical and electrical properties of indium sulfide films with different heat treatments are investigated. Indium sulfide films are heat treated in Ar gas in a temperature range of 100–400 °C. Some annealed samples are heat treated at 300 °C with sulfur powder. The indium sulfide films show a band gap of 1.9–2.3 eV, an electrical resistivity in the range of 5.5 × 100–6.0 × 103 Ωm, and n-type electrical conduction. The resistivity decreases by three orders of magnitude by heat treatment at 300 °C in Ar gas and recovers almost to the initial state by heat treatment at 300 °C with sulfur powder. The Seebeck coefficient and subgap absorption at 1 eV show similar changes and recovery. The experimental results reveal the possible control of the density of states and of the Fermi level position by heat treatment and, hence, the feasibility of carrier control.
© EDP Sciences, 2020
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.