Eur. Phys. J. Appl. Phys.
Volume 62, Number 2, May 2013
|Number of page(s)||5|
|Section||Physics of Organic Materials and Devices|
|Published online||30 April 2013|
Determination of the conduction mechanism and extraction of diode parameters of Au/PANI-TiO2/Al Schottky diode
Department of Physics, Faculty of Science, Yazd University, P.O. Box 89195-741, Yazd, Iran
a e-mail: email@example.com
Revised: 14 February 2013
Accepted: 19 March 2013
Published online: 30 April 2013
Schottky barrier diodes based on a composite of polyaniline with titanium oxide (TiO2) were fabricated using aluminum as a Schottky contact and gold as an ohmic contact. The observed current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. The current-voltage characteristics were studied to explain the rectification generation of the diode. The diode shows non-ideal I-V behavior with an ideality factor greater than unity. The conduction mechanism was determined and a Schottky-type conduction process was defined. The diode parameters such as saturation current density and ideality factor were found to be 9.28 x 10−4 A/cm2 and 6.33, respectively.
© EDP Sciences, 2013
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.