| Issue |
Eur. Phys. J. Appl. Phys.
Volume 62, Number 2, May 2013
|
|
|---|---|---|
| Article Number | 20201 | |
| Number of page(s) | 5 | |
| Section | Physics of Organic Materials and Devices | |
| DOI | https://doi.org/10.1051/epjap/2013120545 | |
| Published online | 30 April 2013 | |
https://doi.org/10.1051/epjap/2013120545
Determination of the conduction mechanism and extraction of diode parameters of Au/PANI-TiO2/Al Schottky diode
Department of Physics, Faculty of Science, Yazd University, P.O. Box 89195-741, Yazd, Iran
a e-mail: hojjat2222@yahoo.com
Received:
14
December
2012
Revised:
14
February
2013
Accepted:
19
March
2013
Published online:
30
April
2013
Schottky barrier diodes based on a composite of polyaniline with titanium oxide (TiO2) were fabricated using aluminum as a Schottky contact and gold as an ohmic contact. The observed current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. The current-voltage characteristics were studied to explain the rectification generation of the diode. The diode shows non-ideal I-V behavior with an ideality factor greater than unity. The conduction mechanism was determined and a Schottky-type conduction process was defined. The diode parameters such as saturation current density and ideality factor were found to be 9.28 x 10−4 A/cm2 and 6.33, respectively.
© EDP Sciences, 2013
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