Eur. Phys. J. Appl. Phys.
Volume 60, Number 3, December 2012
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||26 November 2012|
Electrical and photovoltaic properties of heterojunction diode based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
Department of Physics, Anadolu University, Eskisehir 26470, Turkey
a e-mail: firstname.lastname@example.org
Revised: 29 June 2012
Accepted: 26 October 2012
Published online: 26 November 2012
n-Si/p-PEDOT-PSS heterojunction diode was fabricated by deposition of poly(3,4- ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) onto n-type Si wafer using spin coating. Its electrical properties of the diode were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The field emission scanning electron microscopy (FE-SEM) was used to determine the surface quality. SEM result indicates that the surface morphology of the PEDOT-PSS film spin coated on n-Si substrate is almost homogeneous. Diode parameters such as the ideality factor, barrier height and series resistance were calculated using Cheung’s method and C-V measurements. I-V characteristics under dark and illumination conditions were performed to characterize the photovoltaic behavior of the diode.
© EDP Sciences, 2012
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.