| Issue |
Eur. Phys. J. Appl. Phys.
Volume 60, Number 3, December 2012
|
|
|---|---|---|
| Article Number | 30102 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2012120034 | |
| Published online | 26 November 2012 | |
https://doi.org/10.1051/epjap/2012120034
Electrical and photovoltaic properties of heterojunction diode based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
Department of Physics, Anadolu University, Eskisehir 26470, Turkey
a e-mail: mcaglar@anadolu.edu.tr
Received:
25
January
2012
Revised:
29
June
2012
Accepted:
26
October
2012
Published online:
26
November
2012
n-Si/p-PEDOT-PSS heterojunction diode was fabricated by deposition of poly(3,4- ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) onto n-type Si wafer using spin coating. Its electrical properties of the diode were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The field emission scanning electron microscopy (FE-SEM) was used to determine the surface quality. SEM result indicates that the surface morphology of the PEDOT-PSS film spin coated on n-Si substrate is almost homogeneous. Diode parameters such as the ideality factor, barrier height and series resistance were calculated using Cheung’s method and C-V measurements. I-V characteristics under dark and illumination conditions were performed to characterize the photovoltaic behavior of the diode.
© EDP Sciences, 2012
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