Eur. Phys. J. Appl. Phys.
Volume 46, Number 2, May 2009
|Number of page(s)||5|
|Section||Physics of Organic Materials and Devices|
|Published online||01 April 2009|
The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure
Süleyman Demirel University, Faculty of Sciences and Arts,
Department of Physics, 32260 Isparta, Turkey
2 Gazi University, Faculty of Engineering and Architecture, Department of Chemical Engineering, 06500 Ankara, Turkey
Corresponding author: firstname.lastname@example.org
Revised: 7 January 2009
Accepted: 16 January 2009
Published online: 1 April 2009
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of metal-organic compound conductive polymer-semiconductor Al/P2ClAn(C2H5COOH)/p-Si structures were measured in the temperature range 80–340 K. P2ClAn: the poly(2-chloroaniline). The P2ClAn emeraldine salt was synthesized chemically by using propionic (C2H5COOH) acid. The analysis of I-V characteristics based on the thermoionic emission (TE) mechanism has revealed a decrease of zero-bias barrier height and a increase of the ideality factor at lower temperatures. Temperature dependence of the barrier height (BH) has shown a disagreement with those calculated from C-V characteristics. This behaviour is attributed to Schottky barrier inhomogeneities at interface. The temperature coefficient of BH has been found to be -2.9×10-4 eV/K for Al/P2ClAn(C2H5COOH)/p-Si. ln(I0/ versus 1/T plot gives activation energy and Richardson constant as 0.12 eV and 3.82×10-9 A/K2 cm2, respectively.
PACS: 73.40.-c – Electronic transport in interface structures / 73.40.Ei – Rectification / 73.40.Sx – Metal-semiconductor-metal structures / 73.61.Ph – Polymers; organic compounds
© EDP Sciences, 2009
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