| Issue |
Eur. Phys. J. Appl. Phys.
Volume 46, Number 2, May 2009
|
|
|---|---|---|
| Article Number | 20402 | |
| Number of page(s) | 5 | |
| Section | Physics of Organic Materials and Devices | |
| DOI | https://doi.org/10.1051/epjap/2009035 | |
| Published online | 01 April 2009 | |
https://doi.org/10.1051/epjap/2009035
The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure
1
Süleyman Demirel University, Faculty of Sciences and Arts,
Department of Physics, 32260 Isparta, Turkey
2
Gazi University, Faculty of Engineering and Architecture, Department
of Chemical Engineering, 06500 Ankara, Turkey
Corresponding author: ozdemir@fef.sdu.edu.tr
Received:
20
August
2008
Revised:
7
January
2009
Accepted:
16
January
2009
Published online:
1
April
2009
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of
metal-organic compound conductive polymer-semiconductor
Al/P2ClAn(C2H5COOH)/p-Si structures were measured in the
temperature range 80–340 K. P2ClAn: the poly(2-chloroaniline). The P2ClAn
emeraldine salt was synthesized chemically by using propionic
(C2H5COOH) acid. The analysis of I-V characteristics based on the
thermoionic emission (TE) mechanism has revealed a decrease of zero-bias
barrier height and a increase of the ideality factor at lower temperatures.
Temperature dependence of the barrier height (BH) has shown a disagreement
with those calculated from C-V characteristics. This behaviour is attributed to
Schottky barrier inhomogeneities at interface. The temperature coefficient of
BH has been found to be -2.9×10-4 eV/K for
Al/P2ClAn(C2H5COOH)/p-Si. ln(I0/
versus 1/T plot gives
activation energy and Richardson constant 
as 0.12 eV and
3.82×10-9 A/K2 cm2, respectively.
PACS: 73.40.-c – Electronic transport in interface structures / 73.40.Ei – Rectification / 73.40.Sx – Metal-semiconductor-metal structures / 73.61.Ph – Polymers; organic compounds
© EDP Sciences, 2009
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