Eur. Phys. J. Appl. Phys.
Volume 46, Number 2, May 2009
|Number of page(s)||6|
|Section||Physics of Organic Materials and Devices|
|Published online||08 April 2009|
Electrical characterizations of SnPc/p-GaAs heterojunction
Physics department, Faculty of Education, Ain Shams University, Roxy 11757, Cairo, Egypt
2 Physics Department, Faculty of Science, King Abdul Aziz University, Jeddah, Saudi Arabia
Corresponding author: firstname.lastname@example.org
Revised: 31 December 2008
Accepted: 15 January 2009
Published online: 8 April 2009
Current voltage and capacitance-voltage characteristics for SnPc thin film with ~105 nm thickness; deposited on p-GaAs single crystals have been investigated. The dark current voltage-characteristics of the prepared junction have been investigated in a temperature range from ~303 to 393 K. The obtained results showed rectification behaviour. At low forward and reverse bias, the current was found to be limited by the thermoionic emission, while at high forward voltage, space charge limited current dominated by a single trap level of 0.22 eV. The analysis of the dark capacitance voltage characteristics indicated that the carrier concentration is 1.4×1014 cm-3 with a built in voltage ~0.55 eV.
PACS: 81.15.Fg – Laser deposition / 73.40.-c – Electronic transport in interface structures / 73.50.Pz – Photoconduction and photovoltaic effects
© EDP Sciences, 2009
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.