Growth of GaAs/AlxGa1−xAs layers by LPE method and their characterization by SIMS 31303 B. Arghavani Nia, A. Ghaderi, S. Solaymani and M. Oskoie Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110106 AbstractPDF (596.9 KB)References
Structural and mechanical properties of radiofrequency N2/H2 cold plasma-nitrided C38 carbon steel 31302 F.Z. Bouanis, F. Bentiss, M. Traisnel and C. Jama Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110061 AbstractPDF (280.4 KB)References
Schottky barrier formation at the Au to rare earth doped GaN thin film interface 31301 S.R. McHale, J.W. McClory, J.C. Petrosky, J. Wu, A. Rivera, R. Palai, Ya.B. Losovyj and P.A. Dowben Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110082 AbstractPDF (662.0 KB)References
Development of a chamber to investigate high-intensity compression waves upon live cell cultures 31201 C. Bo, J. Balzer, K.A. Brown, S.M. Walley and W.G. Proud Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110052 AbstractPDF (368.5 KB)References
Advanced backside sample preparation for multi-technique surface analysis 31001 M. Py, M. Veillerot, J.M. Fabbri, F. Pierre, D. Jalabert, C. Roukoss, B. Pelissier, R. Boujamaa, C. Trouiller and J.P. Barnes Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110191 AbstractPDF (1.960 MB)References
Photogenerated charge carrier recombination processes in CdS/P3OT solar cells: effect of structural and optoelectronic properties of CdS films 30901 H. Cortina, E. Pineda, J. Campos, M.E. Nicho and H. Hu Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110032 AbstractPDF (847.1 KB)References
An atmospheric pressure plasma source driven by a train of monopolar high voltage pulses superimposed to a dc voltage 30801 O.S. Stoican Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011100184 AbstractPDF (767.1 KB)References
A quantitative analysis of elements in soil using laser-induced breakdown spectroscopy technique 30701 G.-C. He, D.-X. Sun, M.-G. Su and C.-Z. Dong Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110128 AbstractPDF (389.7 KB)References
Magnetoelectric effect in ferromagnetic-ferroelectric tunneling junctions 30601 L.B. Zhang, M.H. Tang, J.C. Li, Y.G. Xiao, Z.Q. Zeng, Z.P. Wang, G.Y. Wang, S.B. Yang, X.L. Xu, B. Jiang and J. He Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011100405 AbstractPDF (820.1 KB)References
Doping and calcination effect on nanostructured aluminosilicates processed by sol-gel route 30401 S. Simon, M. Tămăşan, T. Radu and V. Simon Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011100524 AbstractPDF (467.4 KB)References
Electrical and optical properties of annealed plasma-modified porous silicon 30302 Be. Benyahia, N. Gabouze, H. Tahi and Br. Mahmoudi Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011100508 AbstractPDF (640.2 KB)References
Effect of Ag additive on the photoconductive properties of (Se80Te20)100−xAgx (1 ≤ x ≤ 4) thin films 30301 D. Singh, S. Kumar, S. Kaur and R. Thangaraj Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110127 AbstractPDF (961.7 KB)References
Optical and electrical properties of nanostructured heterojunction (Au|PdPc|ClAlPc|Al) and using as O2 sensor 30203 M.E. Azim-Araghi, E. Karimi-Kerdabadi and M.J. Jafari Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011100376 AbstractPDF (2.967 MB)References
Improved polymer solar cell performance by engineering of cathode interface 30202 J.K. Baral, R. Izquierdo, M. Packirisamy and V.-V. Truong Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110047 AbstractPDF (2.699 MB)References
Low-voltage pentacene field-effect transistors with high mobility and unusual change of the mobility by simple storage 30201 H. Yan, T. Jo, H. Hanagata and H. Okuzaki Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110096 AbstractPDF (871.4 KB)ReferencesOnline Material
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors 30104 D.F. Lin, X.L. Wang, H.L. Xiao, C.M. Wang, L.J. Jiang, C. Feng, H. Chen, Q.F. Hou, Q.W. Deng, Y. Bi and H. Kang Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110209 AbstractPDF (1.263 MB)References
ZnO and Al-doped ZnO thin films prepared by spray pyrolysis for ethanol gas sensing 30103 Y. Bakha, K.M. Bendimerad and S. Hamzaoui Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110072 AbstractPDF (1.303 MB)References
Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates 30102 A. Ilgaz, S. Gökden, R. Tülek, A. Teke, S. Özçelik and E. Özbay Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110218 AbstractPDF (1.275 MB)References
Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode 30101 M. Gassoumi, S. Saadaoui, M.M. Ben Salem, C. Gaquiere and H. Maaref Published online: 18 August 2011 DOI: https://doi.org/10.1051/epjap/2011110136 AbstractPDF (509.3 KB)References