Eur. Phys. J. Appl. Phys.
Volume 51, Number 1, July 2010
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||24 June 2010|
Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate
Laboratoire de Micro-Optoélectroniques et Nanostructures,
Faculté des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia
2 Institut d'Électronique de Microélectronique et de Nanotechnologie IEMN (TIGER), Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France
Corresponding author: email@example.com
Revised: 3 May 2010
Accepted: 17 May 2010
Published online: 24 June 2010
AlGaN/GaN high electron mobility transistors (HEMTs) with sapphire (Al2O3) substrates reveal anomalies like kink effect, current collapse, hysteresis phenomena on Ids-Vds and Ids-Vgs. These parasitic effects can be attributed to the presence of traps in the hetero-structure. Deep defects analysis was performed by conductance deep level transient spectroscopy (CDLTS) under drain pulse. Four electron traps have been detected with activation energy and capture cross-section of 2.62 eV, 1.18 eV, 0.97 eV, 0.48 eV, σn = 2.4 × 10-17 cm2 and σn = 2.37 × 10-14 cm2, σn = 2 × 10-12 cm2 and σn = 4.67 × 10-14 cm2 respectively. The localisation and the identification of these traps have occurred and a correlation between defects and parasitic effects has been discussed.
© EDP Sciences, 2010
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