| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 213 - 217 | |
| Section | Electrical properties | |
| DOI | https://doi.org/10.1051/epjap:2004127 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004127
DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAs
1
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668
Warsaw, Poland
2
Institute of Physics, Polish Academy of Sciences, Al.
Lotnikow 32/46, 02-668 Warsaw, Poland
3
Niels Bohr Institute, Universitetsparken 5, 2100
Copenhagen, Denmark
Corresponding author: kaniew@ite.waw.pl
Received:
10
July
2003
Accepted:
29
January
2004
Published online: 15 July 2004
The thermal emission rate of dominant traps in molecular beam epitaxial n- and p-type AlGaAs subjected to Ar-ion beam etching has been studied by deep level transient spectroscopy. Emission signatures were determined and compared with results obtained by other authors for irradiation induced and grown-in defects in GaAs and AlGaAs. The most significant result of this study is the observation that the process-induced defects in n- as well as p-type AlGaAs exhibit emission signatures, which are characteristic of native defects found in GaAs. The effect is discussed in terms of a compensation effect and related band bending.
PACS: 61.72.Ji – Point defects (vacancies, interstitials, color centers, etc.) and defect clusters / 71.55.Eq – III-V semiconductors / 81.40.Rs – Electrical and magnetic properties (related to treatment conditions)
© EDP Sciences, 2004
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