Eur. Phys. J. Appl. Phys.
Volume 53, Number 1, January 2011
|Number of page(s)||6|
|Section||Semiconductors and Devices|
|Published online||23 December 2010|
Modelling, analysis, and experimental study of SiC JFET body diode
University of Tunis El Manar, ENIT-L.S.E., BP 37 le Belvédère, 1002 Tunis, Tunisia
2 Université de Lyon, Lab. Ampère, INSA-Lyon, Lyon, France
3 University of 7 November at Carthage, École Supérieure de Technologie et d'Informatique (ESTI), 1002 Tunis, Tunisia
Corresponding author: firstname.lastname@example.org
Revised: 1 October 2010
Accepted: 21 October 2010
Published online: 23 December 2010
Within Silicon Carbide Junction Field Effect Transistor (SiC-JFET) model, body diode is not extensively studied and almost under-researched. Body diode remains a complex device to study particularly during switching transients. In this paper, the JFET body diode is experimentally demonstrated to be a power PiN diode. Finite element method model based on the device geometry and SiC material is used to accurately simulate this diode. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. The paper focuses on a step-by-step extraction procedure for design parameters of the SiC-JFET body diode. A comparative study between experimental data and simulation results is given to validate the device model and associate parameters.
© EDP Sciences, 2010
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