| Issue |
Eur. Phys. J. Appl. Phys.
Volume 52, Number 2, November 2010
|
|
|---|---|---|
| Article Number | 20301 | |
| Number of page(s) | 8 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2010139 | |
| Published online | 06 October 2010 | |
https://doi.org/10.1051/epjap/2010139
Toward SiC-JFETs modelling with temperature dependence
Université de Lyon, INSA-Lyon, Lab. Ampère, CNRS, Lyon, France and
Electrical System Laboratory, UR03ES05, ENIT, Tunis, Tunisia
Corresponding author: tarek.bensalah@gmail.com
Received:
22
March
2010
Revised:
9
May
2010
Accepted:
22
July
2010
Published online:
6
October
2010
This paper focuses on the modelling of a SiC-JFET. The novelty aspect is the dependence on temperature. An accurate model has been used in a previous work and an identification procedure for the main model parameters has been demonstrated. Readers have asked for a more advanced SiC JFET temperature-dependent model. A limitation of the current model versus temperature is verified and explained in order to introduce the necessity of a new temperature dependence model. A more advanced model is then considered and a comparative study between experiment and simulation of the device is established. The characteristics of three SiC JFETs devices are considered from experimental and simulation point-of-view. Simulations results clearly replicate the experimental data at different temperatures and a new validity approach, namely validity maps, is proposed. Validity domains are discussed.
© EDP Sciences, 2010
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