Eur. Phys. J. Appl. Phys.
Volume 52, Number 2, November 2010
|Number of page(s)||8|
|Section||Semiconductors and Devices|
|Published online||06 October 2010|
Toward SiC-JFETs modelling with temperature dependence
Université de Lyon, INSA-Lyon, Lab. Ampère, CNRS, Lyon, France and
Electrical System Laboratory, UR03ES05, ENIT, Tunis, Tunisia
Corresponding author: firstname.lastname@example.org
Revised: 9 May 2010
Accepted: 22 July 2010
Published online: 6 October 2010
This paper focuses on the modelling of a SiC-JFET. The novelty aspect is the dependence on temperature. An accurate model has been used in a previous work and an identification procedure for the main model parameters has been demonstrated. Readers have asked for a more advanced SiC JFET temperature-dependent model. A limitation of the current model versus temperature is verified and explained in order to introduce the necessity of a new temperature dependence model. A more advanced model is then considered and a comparative study between experiment and simulation of the device is established. The characteristics of three SiC JFETs devices are considered from experimental and simulation point-of-view. Simulations results clearly replicate the experimental data at different temperatures and a new validity approach, namely validity maps, is proposed. Validity domains are discussed.
© EDP Sciences, 2010
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