Eur. Phys. J. AP
Volume 21, Number 2, February 2003
|Page(s)||107 - 120|
|Section||Semiconductors and Devices|
|Published online||11 December 2002|
Developing an advanced PWM-switch model including semiconductor device non-linearities
Laboratoire d'Électronique et des Technologies de l'Information (LETI),
ENIS, BP W, 3038 Sfax, Tunisia
2 Centre de Génie Électrique de Lyon (CEGELY), INSA-Lyon, Bât. 401, 69621 Villeurbanne, France
Revised: 29 August 2002
Accepted: 17 October 2002
Published online: 11 December 2002
The accurate simulation of power electronic systems is possible when including accurate models of the semiconductor devices, but practically not affordable. Classical ideal averaged models of the system are not suitable either. Hence, averaged models including the non-linear effects of the power semiconductor devices appear quite efficient. The proposed non-ideal PWM-switch model is a useful method for modeling pulse width modulated converters operating in the continuous conduction mode. The main advantages of the proposed averaged model are the takes into account of the non-linear effects of power devices and the possibility to estimate the dissipated power in the different circuit devices. The proposed electrical model can be applied to bi-directional converters and allows the coupling with thermal model in the power electronic system. A simple technique to evaluate the different static and dynamic parameters of the devices, from manufacturers data sheets or experimentally, is presented.
PACS: 84.30.Jc – Power electronics; power supply circuits / 07.05.Tp – Computer modeling and simulation / 85.30.-z – Semiconductor devices
© EDP Sciences, 2003
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