| Issue |
Eur. Phys. J. Appl. Phys.
Volume 52, Number 3, December 2010
|
|
|---|---|---|
| Article Number | 30302 | |
| Number of page(s) | 4 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2010100281 | |
| Published online | 30 November 2010 | |
https://doi.org/10.1051/epjap/2010100281
Current transport characteristics of pSe-nMoSe2 heterojunction diode
1
Department of Physics, Faculty of Engineering and Technology, CHARUSAT, 388 420 Changa, Anand, India
2
Department of Physics, Sardar Patel University, Vallabh Vidyanagar, 388 120 Gujarat, Anand, India
Corresponding author: cksumesh.cv@ecchanga.ac.in
Received:
15
July
2010
Revised:
21
September
2010
Accepted:
27
September
2010
Published online:
30
November
2010
The characteristics of heterojunction diode pSe-nMoSe2 fabricated from thermally evaporated p-Se films on n-type Molybdenum diselenide (MoSe2) grown by direct vapour transport (DVT) technique have been examined by using current-voltage measurements. To investigate the dark current transport mechanism in pSe-nMoSe2 heterojunctions the current-voltage characteristics were measured in the temperature range 100–300 K. The prepared diode shows a rectification ratio of the order of 103 within the range –2 to 2 V. A multi-step tunnelling model was used to analyze the I-V-T characteristics of the prepared device. The activation energy determined from the saturation current was about 1.16 eV.
© EDP Sciences, 2010
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