| Issue |
Eur. Phys. J. Appl. Phys.
Volume 62, Number 2, May 2013
|
|
|---|---|---|
| Article Number | 20104 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2013130018 | |
| Published online | 30 April 2013 | |
https://doi.org/10.1051/epjap/2013130018
Reverse leakage mechanisms of liquid metal contacts onto II–VI group semiconductor (Ga/p-WSe2)
Department of Applied Physics, Indian School of Mines, Dhanbad 826 004, India
a e-mail: achammajohn@yahoo.com
Received:
9
January
2013
Revised:
1
March
2013
Accepted:
25
March
2013
Published online:
30
April
2013
The reverse leakage current mechanisms of Schottky diodes prepared using liquid gallium on as-grown and cleaved tungsten diselenide surfaces were investigated by current-voltage method for the first time. The major leakage mechanism has been identified as tunneling current along with a small contribution of thermionic emission current. The leakage tunneling current is found to be predominant in uncleaved diode compared to that in cleaved one. This is related to the magnitude of interface state density and interfacial inhomogeneities. The inhomogeneous nature of the interface of the fabricated diodes is ascribed to be the reason behind its soft reverse characteristics.
© EDP Sciences, 2013
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