The energy band diagram and photovoltaic characteristic of nano p-AgInTe₂/n-CdS_0.4Se_0.6 heterojunction

Thin film laboratory, Physics Department, Faculty of Education, Ain Shams University, 11757 Cairo, Roxy, Egypt

Corresponding author: amaelbarry@yahoo.com

Received: 28 February 2007
Revised: 27 June 2007
Accepted: 9 July 2007
Published online: 13 December 2007

Abstract

Nano p-AgInTe₂/n-CdS_0.4Se_0.6 heterojunction was constructed. The dark – current – voltage – characteristics of the prepared junction have been investigated in a temperature range from ~303 to 423 K. The operating conduction mechanism was found to be Pool-Frenkel emission for T > 323 K and V < +0.8 volt. The supposed band diagram of p-AgInTe₂/n-CdS_0.4Se_0.6 heterojunction is exhibited. Analysis of the photovoltaic characteristic, at room temperature and under illumination of ~2.7 W/m², lead to the determination of some solar cell parameters, such as; the short circuit current, the open circuit voltage, the fill factor and the power conversion efficiency.