Eur. Phys. J. Appl. Phys.
Volume 40, Number 3, December 2007
|Page(s)||241 - 246|
|Section||Semiconductors and Related Materials|
|Published online||13 December 2007|
The energy band diagram and photovoltaic characteristic of nano p-AgInTe2/n-CdS0.4Se0.6 heterojunction
Thin film laboratory, Physics Department, Faculty of Education, Ain Shams University, 11757 Cairo, Roxy, Egypt
Corresponding author: email@example.com
Revised: 27 June 2007
Accepted: 9 July 2007
Published online: 13 December 2007
Nano p-AgInTe2/n-CdS0.4Se0.6 heterojunction was constructed. The dark – current – voltage – characteristics of the prepared junction have been investigated in a temperature range from ~303 to 423 K. The operating conduction mechanism was found to be Pool-Frenkel emission for T > 323 K and V < +0.8 volt. The supposed band diagram of p-AgInTe2/n-CdS0.4Se0.6 heterojunction is exhibited. Analysis of the photovoltaic characteristic, at room temperature and under illumination of ~2.7 W/m2, lead to the determination of some solar cell parameters, such as; the short circuit current, the open circuit voltage, the fill factor and the power conversion efficiency.
PACS: 73.40.-c – Electronic transport in interface structures / 73.50.Pz – Photoconduction and photovoltaic effects
© EDP Sciences, 2007
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