| Issue |
Eur. Phys. J. Appl. Phys.
Volume 60, Number 1, October 2012
|
|
|---|---|---|
| Article Number | 10104 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2012120343 | |
| Published online | 31 October 2012 | |
https://doi.org/10.1051/epjap/2012120343
Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodes
Department of Applied Physics, Indian School of Mines, Dhanbad 826004, Jharkhand, India
a e-mail: achammajohn@yahoo.com
Received:
29
August
2012
Accepted:
2
October
2012
Published online:
31
October
2012
The reverse I-V characteristics of In-pWSe2 and Al-pWSe2 Schottky barrier diodes were investigated at room temperature with two different metal thicknesses. A model is presented on the basis of thermionic emission and tunneling to explain the unusually high leakage current observed in these diodes. It has been identified that the major contribution to leakage current is by tunneling mechanism, which significantly affects the reverse I-V characteristics of the Schottky contacts, along with a very small amount of thermionic emission current. We have also extracted various Schottky diode parameters of the two types of diodes fabricated and compared the data. It is found that the diode with 1000 Å metal thickness possesses more tunneling current compared to 500 Å diode.
© EDP Sciences, 2012
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