| Issue |
Eur. Phys. J. Appl. Phys.
Volume 50, Number 1, April 2010
|
|
|---|---|---|
| Article Number | 10602 | |
| Number of page(s) | 5 | |
| Section | Nanomaterials and Nanotechnologies | |
| DOI | https://doi.org/10.1051/epjap/2010013 | |
| Published online | 26 February 2010 | |
https://doi.org/10.1051/epjap/2010013
Growth and properties of Dy-doped GaN nanowires
Institute of Semiconductors, College of Physics and Electronics, Shandong
Normal University, Jinan, 250014, P.R. China
Corresponding author: xuechengshan@yahoo.com.cn
Received:
10
December
2009
Accepted:
21
December
2009
Published online:
26
February
2010
GaN nanowires doped with Dy have been fabricated on Si (111) substrate through ammoniating Ga2O3 films doped with rare earth phosphor. The samples are characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL). The results demonstrate that the Dy-doped GaN nanowires were single crystalline with hexagonal wurtzite structure. The diameters of the nanowires were about 50 nm and the lengths were up to several tens micrometers. Also, the optical properties of the nanowires were greatly dependent on the doping of Dy. The growth mechanism of crystalline GaN nanowires is discussed briefly.
© EDP Sciences, 2010
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