Eur. Phys. J. Appl. Phys.
Volume 50, Number 1, April 2010
|Number of page(s)||5|
|Section||Nanomaterials and Nanotechnologies|
|Published online||26 February 2010|
Growth and properties of Dy-doped GaN nanowires
Institute of Semiconductors, College of Physics and Electronics, Shandong
Normal University, Jinan, 250014, P.R. China
Corresponding author: firstname.lastname@example.org
Accepted: 21 December 2009
Published online: 26 February 2010
GaN nanowires doped with Dy have been fabricated on Si (111) substrate through ammoniating Ga2O3 films doped with rare earth phosphor. The samples are characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL). The results demonstrate that the Dy-doped GaN nanowires were single crystalline with hexagonal wurtzite structure. The diameters of the nanowires were about 50 nm and the lengths were up to several tens micrometers. Also, the optical properties of the nanowires were greatly dependent on the doping of Dy. The growth mechanism of crystalline GaN nanowires is discussed briefly.
© EDP Sciences, 2010
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.