Focus on Electrical Contacts

Improving the contact resistance at low force using gold coated carbon nanotube surfaces 12904

J. W. McBride, E. M. Yunus and S. M. Spearing

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010019

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Open Access

Arc extinction characteristics in power supply frequencies from 50 Hz to 1 MHz 12903

N. Miki and K. Sawa

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010021

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Sliding contacts on printed circuit boards and wear behavior 12902

J.-P. Le Solleu

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010020

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New contact material for reduction of arc duration for dc application 12901

L. Doublet, N. Ben Jemaa, S. Rivoirard, C. Bourda, E. Carvou, D. Sallais, D. Givord and P. Ramoni

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010018

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Biophysics and Biosensors

Characterization of polyaniline-coated magnetic nanoparticles for application in a disposable membrane strip biosensor 11401

J. S. Yuk, J. Rose and E. C. Alocilja

Published online: 15 March 2010

DOI: https://doi.org/10.1051/epjap/2010023

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Instrumentation and Metrology

Comment

Comment on “A dynamical model for investigation of A₃ point maximal spatial evolution during resistance spot welding using Boubaker polynomials” by S. Slama, J. Bessrour, K. Boubaker and M. Bouhafs On the higher order derivatives of the 4q-Boubaker polynomials 11201

D. H. Zhang

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010028

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Physics of Energy Generation Transfer, Conversion and Storage

Modelling chemical composition in electric systems – implications to the dynamics of dye-sensitised solar cells 11101

T. Kovanen, T. Tarhasaari, L. Kettunen and J. Korppi-Tommola

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010015

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Plasma, Discharges and Processes

Electron number density and temperature measurements in laser produced brass plasma 11003

A. A. Shaltout, N. Y. Mostafa, M. S. Abdel-Aal and H. A. Shaban

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010029

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The resistance of plasma channel in transformer oil 11002

J. Kúdelčík

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010016

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Method of metal transfer regulation during GMA welding 11001

V. A. Nemchinsky and D. W. Meyer

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010012

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Nanomaterials and Nanotechnologies

Shape-dependence of near-field heat transfer between a spheroidal nanoparticle and a flat surface 10603

O. Huth, F. Rüting, S.-A. Biehs and M. Holthaus

Published online: 15 March 2010

DOI: https://doi.org/10.1051/epjap/2010027

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Growth and properties of Dy-doped GaN nanowires 10602

Y. P. Cao, F. Shi, H. B. Sun, W. J. Liu, Y. F. Guo and C. S. Xue

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010013

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Symmetry-induced perfect transmission and inverse magnetoresistance in cascade junctions of ferromagnet and semiconductor 10601

R. L. Zhang, J. S. Zhang, D. Li, J. Li and R. W. Peng

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010011

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Thin Films

Physico-chemical characterization of multilayer YIG thin film deposited by rf sputtering 10502

B. Abdel Samad, M.-F. Blanc-Mignon, M. Roumie, A. Siblini, J. P. Chatelon and M. Korek

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010026

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Dielectric properties of thin insulating layers measured by Electrostatic Force Microscopy 10501

C. Riedel, R. Arinero, Ph. Tordjeman, M. Ramonda, G. Lévêque, G. A. Schwartz, D. G. de Oteyza, A. Alegría and J. Colmenero

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010010

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Physics of Organic Materials and Devices

Electrical properties of safranine T/p-Si organic/inorganic semiconductor devices 10401

Ö. Güllü, S. Asubay, M. Biber, T. Kiliçoglu and A. Türüt

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010022

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Semiconductors and Devices

Enhanced light extraction from InGaN/GaN-based light emitting diodes epistructure with ICP-etched nanoisland GaN:Mg surface 10301

H. Gong, X. Hao, W. Xia, Y. Wu and X. Xu

Published online: 26 February 2010

DOI: https://doi.org/10.1051/epjap/2010024

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