| Issue |
Eur. Phys. J. Appl. Phys.
Volume 34, Number 2, May 2006
|
|
|---|---|---|
| Page(s) | 77 - 80 | |
| Section | Nanomaterials and Nanotechnologies | |
| DOI | https://doi.org/10.1051/epjap:2006047 | |
| Published online | 25 May 2006 | |
https://doi.org/10.1051/epjap:2006047
Characteristics of Ga2O3 nanomaterials grown on chromium substrates
School of Materials Science and Engineering, Inha University, Incheon 402-751, Korea
Corresponding author: hwkim@inha.ac.kr
Received:
16
March
2005
Revised:
22
December
2005
Accepted:
23
December
2005
Published online:
25
May
2006
We produced gallium oxide (Ga2O3) nanomaterials with various widths on chromium (Cr) substrates by the thermal evaporation of GaN powders. We characterized the samples using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and photoluminescence spectroscopy. The results showed that the products consisted of belt-like Ga2O3 nanomaterials, which had monoclinic structures. The photoluminescence spectrum showed a blue light emission.
PACS: 81.07.-b – Nanoscale materials and structures: fabrication and characterization / 81.10.Bk – Growth from vapor
© EDP Sciences, 2006
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