Eur. Phys. J. Appl. Phys.
Volume 40, Number 2, November 2007
|Page(s)||129 - 131|
|Section||Semiconductors and Related Materials|
|Published online||31 October 2007|
Synthesis of GaN nanorods using Tantalum catalyst by magnetron sputtering
Institute of Semiconductor, Shandong Normal University,
Jinan 250014, P.R. China
Corresponding author: firstname.lastname@example.org
Revised: 9 August 2007
Accepted: 14 August 2007
Published online: 31 October 2007
Single crystalline wurzite GaN nanorods are successfully synthesized on the tantalum catalyzed Si substrate by RF magnetron sputtering. The products are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectra (FTIR), transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and photoluminescence (PL). The results show that the nanorods have a hexagonal wurtzite structure with diameters ranging from 80 to 200 nm and lengths typically up to 10 µm. The PL spectrum exhibits a strong UV light emission at 364 nm. The growth mechanism of the crystalline GaN nanorods is discussed briefly.
PACS: 68.65.-k – Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties / 78.30.Fs – III-V and II-VI semiconductors / 81.15.Cd – Deposition by sputtering
© EDP Sciences, 2007
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