Eur. Phys. J. Appl. Phys.
Volume 38, Number 2, May 2007
|Page(s)||107 - 110|
|Section||Semiconductors and Related Materials|
|Published online||21 March 2007|
Influence of annealing temperature of ZnO layer on synthesizing low dimensional GaN nanostructured materials
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Corresponding author: email@example.com
Accepted: 13 February 2007
Published online: 21 March 2007
As-grown ZnO thin films are annealed in O2 ambient for 15 min at the temperature of 700 °C, 800 °C, 900 °C and 1000 °C, respectively. Then the Ga2O3 thin films are deposited on ZnO/Si(111) substrates by sputtering Ga2O3 target in a JCK-500A radio frequency magnetron sputtering system. The low dimensional GaN nanostructured materials are obtained on Si substrates by ammoniating the Ga2O3/ZnO films at 950 °C for 15 min in a quartz tube. X-ray diffraction (XRD), Scanning electron microscope (SEM), Fourier transform infrared spectrophotometer (FTIR) and photoluminescence (PL) are used to analyze the structure, morphology and optical properties of GaN nanostructured films. The results show that their properties are investigated particularly as a function of annealing temperature of ZnO layer. The mechanism is also briefly discussed.
PACS: 68.55.-a – Thin film structure and morphology / 81.05.Dz – II-VI semiconductors / 81.15.Cd – Deposition by sputtering
© EDP Sciences, 2007
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