Eur. Phys. J. Appl. Phys.
Volume 46, Number 2, May 2009
|Number of page(s)||4|
|Section||Semiconductors and Devices|
|Published online||27 March 2009|
Electrical properties of Se–Zn–In chalcogenide glasses
Department of physics, Banaras Hindu University, 221005 Varanasi, India
Corresponding author: firstname.lastname@example.org
Revised: 20 January 2009
Accepted: 9 February 2009
Published online: 27 March 2009
Electrical measurements of SeZn2InX (X = 0, 2, 4, 6 and 10) chalcogenide glasses have been carried out at room temperature. I-V characteristic of the present glasses were recorded upto 200 V. A drastic changes in I-V characteristic have been observed between 180 to 200 V for 4, 6, 10 at% of indium. The composition dependence of electrical conductivity is also discussed.
PACS: 63.50.Lm – Glasses and amorphous solids / 72.15.Cz – Electrical and thermal conduction in amorphous and liquid metals and alloys / 61.43.Dq – Amorphous semiconductors, metals, and alloys
© EDP Sciences, 2009
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