| Issue |
Eur. Phys. J. Appl. Phys.
Volume 44, Number 3, December 2008
|
|
|---|---|---|
| Page(s) | 217 - 221 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2008171 | |
| Published online | 06 December 2008 | |
https://doi.org/10.1051/epjap:2008171
Effect of Zn incorporation on the a.c. conductivity of glassy Se70Te30 alloy
1
Department of Physics, Harcourt Butler Technological Institute,
Kanpur, India
2
Department of Physics, Banaras Hindu University, Varanasi, India
Corresponding author: dr_ashok_kumar@yahoo.com
Received:
10
June
2008
Revised:
21
July
2008
Accepted:
27
August
2008
Published online:
6
December
2008
The present work reports the temperature and frequency dependence of a.c. conductivity in glassy Se70Te30−xZnx (x = 0, 2, 4 and 6) alloys in the temperature range 300–500 K and frequency range 1 kHz. An agreement between experimental and theoretical results suggests that the a.c. conductivity behaviour of the present samples can be successfully explained by correlated barrier hopping (CBH) model. The density of defect states has been determined using this model for all the glassy alloys. The results show that bipolaron hopping dominates over single-polaron hopping in this glassy system. This is explained in terms of lower values of the maximum barrier height for single-polaron hopping.
PACS: 72.80.Ng – Disordered solids / 61.43.Fs – Glasses
© EDP Sciences, 2008
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