Eur. Phys. J. Appl. Phys.
Volume 46, Number 2, May 2009
|Number of page(s)||6|
|Section||Semiconductors and Devices|
|Published online||27 March 2009|
Analysis of poly-Si thin film p+-n-n+ homojunction solar cell and heterojunction solar cell with and without a thin μc-Si layer at the interface of a-Si and poly-Si layers
Institute of Electronics Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, Republic of China
Corresponding author: firstname.lastname@example.org
Revised: 15 January 2009
Accepted: 28 January 2009
Published online: 27 March 2009
In this study, new possibilities for higher efficiency poly-Si thin film solar cells are investigated using MEDICITM device simulator. The poly-Si p+-n-n+ thin film solar cell with a thin a-Si p+ layer is found to have higher efficiency than the homojunction p+-n-n+ cell. Further improvement in efficiency of the heterojunction p+-n-n+ cell is achieved by introducing a thin μc-Si layer at the interface of a-Si emitter and poly-Si absorber layers. The μc-Si layer at the interface is found to reduce the recombination losses at the interface and improved the fill factor and efficiency of the cell. The photovoltaic parameters of the cell and the absorber layer thickness for optimum efficiency are highly influenced by grain size and passivation at the grain boundary.
PACS: 78.30.Fs – III-V and II-VI semiconductors / 78.55.Cr – III-V semiconductors / 85.30.De – Semiconductor-device characterization, design, and modeling
© EDP Sciences, 2009
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