Eur. Phys. J. Appl. Phys.
Volume 60, Number 1, October 2012
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||10 October 2012|
The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
a e-mail: firstname.lastname@example.org
Revised: 23 March 2012
Accepted: 5 September 2012
Published online: 10 October 2012
The current-voltage (I-V) characteristic of the Au/n-GaAs/Au-Ge Schottky diode with native oxide interfacial layer has been studied as a function of hydrostatic pressure. The ideality factor and barrier height of the diode have shown hydrostatic pressure dependence. The pressure coefficient of the flat-band barrier height was found to be 10.3 meV/kbar and the flat-band barrier height at zero pressure was calculated as 0.854 eV. Additionally, the energy distribution of interface state density was determined from I-V characteristics for each hydrostatic pressure value.
© EDP Sciences, 2012
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