Eur. Phys. J. Appl. Phys.
Volume 60, Number 1, October 2012
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||10 October 2012|
The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
a e-mail: email@example.com
Revised: 23 March 2012
Accepted: 5 September 2012
Published online: 10 October 2012
The current-voltage (I-V) characteristic of the Au/n-GaAs/Au-Ge Schottky diode with native oxide interfacial layer has been studied as a function of hydrostatic pressure. The ideality factor and barrier height of the diode have shown hydrostatic pressure dependence. The pressure coefficient of the flat-band barrier height was found to be 10.3 meV/kbar and the flat-band barrier height at zero pressure was calculated as 0.854 eV. Additionally, the energy distribution of interface state density was determined from I-V characteristics for each hydrostatic pressure value.
© EDP Sciences, 2012
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.