Issue |
Eur. Phys. J. Appl. Phys.
Volume 41, Number 1, January 2008
|
|
---|---|---|
Page(s) | 1 - 11 | |
Section | Semiconductors and Related Materials | |
DOI | https://doi.org/10.1051/epjap:2007176 | |
Published online | 19 December 2007 |
https://doi.org/10.1051/epjap:2007176
New modeling of the power diode using the VHDL-AMS language
Laboratoire d'électroniques et information technologique, École Nationale d'Ingénieurs de Sfax, Route Soukra km 4, PB W, 3038 Sfax, Tunisia
Corresponding author: Nouri.Masmoudi@enis.rnu.tn
Received:
8
November
2006
Revised:
30
May
2007
Accepted:
3
October
2007
Published online:
19
December
2007
Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. This paper focuses on an implementation of a physic-based analytical PIN diode model [Power Electron. 8, 342 (1993)] with the very high description language VHDL-AMS [IEEE Computer Society, IEEE Draft Standard VHDL-AMS Language Reference Manual, 1997]. The Lumped Charge (LC) concept of Linvill is employed. The state-of-art of parameter extraction methods is briefly recalled and a step-by-step extraction procedure for the model parameters is described. Due to poor agreement between simulation results and experimental data, an improvement is added to the model. Finally, our improved model is validated with a confrontation of the simulated and the experimental curves for both current and voltage at different range of the operating conditions. All this operation was made under the Free version of the “SIMPLORER©-SV 7.0” environment.
PACS: 71.15.-m – Methods of electronic structure calculations / 02.60.Cb – Numerical simulation; solution of equations
© EDP Sciences, 2007
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